Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Infrared photovoltaic detector based on p-GeTe/n-Si heterojunction

Abstract GeTe is an important narrow bandgap semiconductor material and has found application in the fields of phase change storage as well as spintronics devices. However, it has not been studied for application in the field of infrared photovoltaic detectors working at room temperature. Herein, Ge...

Full description

Bibliographic Details
Main Authors: Yiqun Zhao, Libin Tang, Shengyi Yang, Shu Ping Lau, Kar Seng Teng
Format: Article
Language:English
Published: SpringerOpen 2020-06-01
Series:Nanoscale Research Letters
Subjects:
GeTe
Heterojunction
Optoelectronic characteristics
Photovoltaic detector
Online Access:http://link.springer.com/article/10.1186/s11671-020-03336-7

Internet

http://link.springer.com/article/10.1186/s11671-020-03336-7

Similar Items