Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

Speeding Up the Write Operation for Multi-Level Cell Phase Change Memory with Programmable Ramp-Down Current Pulses

Multi-level cell (MLC) phase change memory (PCM) can not only effectively multiply the memory capacity while maintaining the cell area, but also has infinite potential in the application of the artificial neural network. The write and verify scheme is usually adopted to reduce the impact of device-t...

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Bibliographic Details
Main Authors: Chenchen Xie, Xi Li, Houpeng Chen, Yang Li, Yuanguang Liu, Qian Wang, Kun Ren, Zhitang Song
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Micromachines
Subjects:
multi-level cell
phase change memory
programmable ramp-down current pulses
Online Access:https://www.mdpi.com/2072-666X/10/7/461

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https://www.mdpi.com/2072-666X/10/7/461

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