Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

Growth of thick [1 1 1]-oriented 3C-SiC films on T-shaped Si micropillars

In this paper we report the morphology and the microstructural properties of thick [1 1 1]-oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant substrate was designed to release the stress developed in 3C-SiC grown on Si, due to the lattice mismatch and the different t...

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Bibliographic Details
Main Authors: M. Agati, S. Boninelli, C. Calabretta, F. Mancarella, M. Mauceri, D. Crippa, M. Albani, R. Bergamaschini, L. Miglio, F. La Via
Format: Article
Language:English
Published: Elsevier 2021-10-01
Series:Materials & Design
Subjects:
Silicon carbide
Hetero-epitaxy
Compliant substrates
Crystal defects
Atomic resolution scanning transmission electron microscopy
Finite-element analysis
Online Access:http://www.sciencedirect.com/science/article/pii/S0264127521003865

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http://www.sciencedirect.com/science/article/pii/S0264127521003865

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