Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers
Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ens...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-04-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5025516 |