Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Comparison on mechanical properties of heavily phosphorus- and arsenic-doped Czochralski silicon wafers

Heavily phosphorus (P)- and arsenic (As)-doped Czochralski silicon (CZ-Si) wafers generally act as the substrates for the epitaxial silicon wafers used to fabricate power and communication devices. The mechanical properties of such two kinds of n-type heavily doped CZ silicon wafers are vital to ens...

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Bibliographic Details
Main Authors: Kang Yuan, Yuxin Sun, Yunhao Lu, Xingbo Liang, Daxi Tian, Xiangyang Ma, Deren Yang
Format: Article
Language:English
Published: AIP Publishing LLC 2018-04-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5025516

Internet

http://dx.doi.org/10.1063/1.5025516

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