Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors

Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors

We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than...

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Bibliographic Details
Main Authors:	JooWon Yang, Yong-Sang Kim, Jae-Hong Jeon, KeeChan Park
Format:	Article
Language:	English
Published:	Taylor & Francis Group 2021-07-01
Series:	Journal of Information Display
Online Access:	http://dx.doi.org/10.1080/15980316.2021.1896587

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