Effects of the grain boundary protrusion position on the off-state current of polycrystalline silicon thin-film transistors
We report the effects of grain boundary (GB) protrusion on the off-state current (IOFF) of p-channel polycrystalline silicon thin-film transistors by using three-dimensional technology computer-aided design (TCAD) simulation. We found that the IOFF at a high drain bias, VDS = −10 V, varies more than...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2021-07-01
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| Series: | Journal of Information Display |
| Online Access: | http://dx.doi.org/10.1080/15980316.2021.1896587 |