Low Frequency Noise Characterization and Signal-to-Noise Ratio Optimization for Silicon Hall Cross Sensors
In this paper, silicon-based Hall cross sensors with different device dimensions and carrier densities are designed and fabricated. Low frequency noise behavior regarding to the device dimension and carrier density of the Hall cross sensors has been successfully characterized. Based on the measured...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2015-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/7076592/ |