Low Frequency Noise Characterization and Signal-to-Noise Ratio Optimization for Silicon Hall Cross Sensors

In this paper, silicon-based Hall cross sensors with different device dimensions and carrier densities are designed and fabricated. Low frequency noise behavior regarding to the device dimension and carrier density of the Hall cross sensors has been successfully characterized. Based on the measured...

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Bibliographic Details
Main Authors: Dongli Zhang, Mingxiang Wang, Kai Sun
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
1/f
Online Access:https://ieeexplore.ieee.org/document/7076592/