Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Ambipolar Charge Storage in Type‐I Core/Shell Semiconductor Quantum Dots toward Optoelectronic Transistor‐Based Memories

Abstract Efficient charge storage media play a pivotal role in transistor‐based memories and thus are under intense research. In this work, the charge storage ability of type‐I InP/ZnS core/shell quantum dots is well revealed through studying a pentacene‐based organic transistor with the quantum dot...

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Bibliographic Details
Main Authors: Hao hu, Guohao Wen, Jiamin Wen, Long‐Biao Huang, Meng Zhao, Honglei Wu, Zhenhua Sun
Format: Article
Language:English
Published: Wiley 2021-08-01
Series:Advanced Science
Subjects:
InP/ZnS quantum dots
optoelectronic memory
organic transistors
photonic synaptic transistors
type‐I core–shell quantum dots
Online Access:https://doi.org/10.1002/advs.202100513

Internet

https://doi.org/10.1002/advs.202100513

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