| Summary: | In this paper, it is studied for the first time, the possibility of manufacturing a Bulk Barrier diode in planar technology usingsimulation. This study is based on simulation results obtained with a 2-D device simulator (S-PISCES). More precisely, theelectrical and switching behavior of the proposed devices in planar technology were investigated. The results of this studyshow that the technological parameters (doping concentrations), as well as the geometrical sizes (middle region width)and the bias conditions (applied voltage), have significant effects on the electrical and switching behavior of the proposeddevices. The appropriate choice of these parameters can reduce the switching time in the range of few picoseconds andalso dramatically modify the current through the device. The simulation results of devices in planar technology have beencompared with those designed in non planar technology. Finally, good agreement among theory and simulations results ofthe proposed devices observed.
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