A study of the silicon Bulk-Barrier Diodes designed in planar technology
In this paper, it is studied for the first time, the possibility of manufacturing a Bulk Barrier diode in planar technology usingsimulation. This study is based on simulation results obtained with a 2-D device simulator (S-PISCES). More precisely, theelectrical and switching behavior of the proposed...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Eastern Macedonia and Thrace Institute of Technology
2009-01-01
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| Series: | Journal of Engineering Science and Technology Review |
| Subjects: | |
| Online Access: | http://www.jestr.org/downloads/volume2/fulltext2809.pdf |