28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K

28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K

This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of...

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Bibliographic Details
Main Authors: Babak Kazemi Esfeh, Valeriya Kilchytska, N. Planes, M. Haond, Denis Flandre, Jean-Pierre Raskin
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
FDSOI
UTBB MOSFETs
RF figures of merit (FoM)
cryogenic temperature
parasitic elements
Online Access:https://ieeexplore.ieee.org/document/8672466/
Description
Summary:This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of small-signal equivalent circuit are extracted from the measured S-parameters. Increases of f<sub>T</sub> and f<sub>max</sub> by about 85 GHz and about 30 GHz, respectively, are demonstrated at 77 K. The observed behavior of RF FoMs versus temperature is discussed in terms of small-signal equivalent circuit elements, both intrinsic and extrinsic (parasitics). This paper suggests 28-nm FDSOI as a good candidate for future cryogenic applications.
ISSN:2168-6734

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