28-nm FDSOI nMOSFET RF Figures of Merits and Parasitic Elements Extraction at Cryogenic Temperature Down to 77 K
This paper presents detailed RF characterization of 28-nm FDSOI nMOSFETs at cryogenic temperatures down to 77 K. Two main RF figures of merit (FoM), i.e., current gain cutoff frequency (f<sub>T</sub>) and maximum oscillation frequency (f<sub>max</sub>), as well as elements of...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8672466/ |