The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease....

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Bibliographic Details
Main Authors: Di Niu, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu, Xiaoliang Wang
Format: Article
Language:English
Published: MDPI AG 2021-01-01
Series:Micromachines
Subjects:
p-GaN high-electron-mobility transistor (HEMT)
different repair methods
repair process
Online Access:https://www.mdpi.com/2072-666X/12/2/131

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https://www.mdpi.com/2072-666X/12/2/131

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