Two-step Fabrication of Large Area SiO2/Si Membranes

Two-step Fabrication of Large Area SiO2/Si Membranes

Two-step fabrication technique of SiO<sub>2</sub>/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon &lt;100&gt; wafer in tetramethylammonium hydroxide (TMAH) water solution and SF<sub>6</sub>/O<sub>2</sub>...

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Main Authors: Viktoras GRIGALIŪNAS, Brigita ABAKEVIČIENĖ, Ignas GRYBAS, Angelė GUDONYTĖ, Vitoldas KOPUSTINSKAS, Darius VIRŽONIS, Ramūnas NAUJOKAITIS, Sigitas TAMULEVIČIUS
Format: Article
Language:English
Published: Kaunas University of Technology 2012-12-01
Series:Medžiagotyra
Subjects:
SiO2/Si membrane
TMAH etching
reactive ion etching
surface roughness
Online Access:http://matsc.ktu.lt/index.php/MatSc/article/view/3090
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spelling doaj-a2a86736d5fb49a2aed29cd5d3f41dcb2020-11-24T21:32:47ZengKaunas University of TechnologyMedžiagotyra1392-13202029-72892012-12-0118432532910.5755/j01.ms.18.4.30901846Two-step Fabrication of Large Area SiO2/Si MembranesViktoras GRIGALIŪNAS0Brigita ABAKEVIČIENĖ1Ignas GRYBAS2Angelė GUDONYTĖ3Vitoldas KOPUSTINSKAS4Darius VIRŽONIS5Ramūnas NAUJOKAITIS6Sigitas TAMULEVIČIUS7Kaunas University of TechnologyKaunas University of TechnologyKaunas University of TechnologyKaunas University of TechnologyKaunas University of TechnologyKaunas University of TechnologyKaunas University of TechnologyKaunas University of TechnologyTwo-step fabrication technique of SiO<sub>2</sub>/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon &lt;100&gt; wafer in tetramethylammonium hydroxide (TMAH) water solution and SF<sub>6</sub>/O<sub>2</sub> reactive ion etching is presented in this study. The influence of temperature on stress and deformations of membrane was simulated using Solid Works software. The study of influence of photomask opening size on etching rate shows that TMAH etching rate V = 0.44 mm/min is higher for the biggest opening, whereas for smaller openings the etching rate is evidently decreased. It was revealed that TMAH during long etching time smoothly affects thermally grown silicon dioxide film as surface roughness R<sub>a</sub> increases from 0.558 μm to 0.604 μm. SF<sub>6</sub>/O<sub>2</sub> reactive etching rate is smoothly dependent on deep opening size when plasma power density varies from 0.25 W/cm<sup>2</sup> to 1.0 W/cm<sup>2</sup>.<p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.18.4.3090">http://dx.doi.org/10.5755/j01.ms.18.4.3090</a></p>http://matsc.ktu.lt/index.php/MatSc/article/view/3090SiO2/Si membraneTMAH etchingreactive ion etchingsurface roughness
collection DOAJ
language English
format Article
sources DOAJ
author Viktoras GRIGALIŪNAS
Brigita ABAKEVIČIENĖ
Ignas GRYBAS
Angelė GUDONYTĖ
Vitoldas KOPUSTINSKAS
Darius VIRŽONIS
Ramūnas NAUJOKAITIS
Sigitas TAMULEVIČIUS
spellingShingle Viktoras GRIGALIŪNAS
Brigita ABAKEVIČIENĖ
Ignas GRYBAS
Angelė GUDONYTĖ
Vitoldas KOPUSTINSKAS
Darius VIRŽONIS
Ramūnas NAUJOKAITIS
Sigitas TAMULEVIČIUS
Two-step Fabrication of Large Area SiO2/Si Membranes
Medžiagotyra
SiO2/Si membrane
TMAH etching
reactive ion etching
surface roughness
author_facet Viktoras GRIGALIŪNAS
Brigita ABAKEVIČIENĖ
Ignas GRYBAS
Angelė GUDONYTĖ
Vitoldas KOPUSTINSKAS
Darius VIRŽONIS
Ramūnas NAUJOKAITIS
Sigitas TAMULEVIČIUS
author_sort Viktoras GRIGALIŪNAS
title Two-step Fabrication of Large Area SiO2/Si Membranes
title_short Two-step Fabrication of Large Area SiO2/Si Membranes
title_full Two-step Fabrication of Large Area SiO2/Si Membranes
title_fullStr Two-step Fabrication of Large Area SiO2/Si Membranes
title_full_unstemmed Two-step Fabrication of Large Area SiO2/Si Membranes
title_sort two-step fabrication of large area sio2/si membranes
publisher Kaunas University of Technology
series Medžiagotyra
issn 1392-1320
2029-7289
publishDate 2012-12-01
description Two-step fabrication technique of SiO<sub>2</sub>/Si membrane combining the deep local etching of double side polished and thermally oxidized silicon &lt;100&gt; wafer in tetramethylammonium hydroxide (TMAH) water solution and SF<sub>6</sub>/O<sub>2</sub> reactive ion etching is presented in this study. The influence of temperature on stress and deformations of membrane was simulated using Solid Works software. The study of influence of photomask opening size on etching rate shows that TMAH etching rate V = 0.44 mm/min is higher for the biggest opening, whereas for smaller openings the etching rate is evidently decreased. It was revealed that TMAH during long etching time smoothly affects thermally grown silicon dioxide film as surface roughness R<sub>a</sub> increases from 0.558 μm to 0.604 μm. SF<sub>6</sub>/O<sub>2</sub> reactive etching rate is smoothly dependent on deep opening size when plasma power density varies from 0.25 W/cm<sup>2</sup> to 1.0 W/cm<sup>2</sup>.<p>DOI: <a href="http://dx.doi.org/10.5755/j01.ms.18.4.3090">http://dx.doi.org/10.5755/j01.ms.18.4.3090</a></p>
topic SiO2/Si membrane
TMAH etching
reactive ion etching
surface roughness
url http://matsc.ktu.lt/index.php/MatSc/article/view/3090
work_keys_str_mv AT viktorasgrigaliunas twostepfabricationoflargeareasio2simembranes
AT brigitaabakeviciene twostepfabricationoflargeareasio2simembranes
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AT angelegudonyte twostepfabricationoflargeareasio2simembranes
AT vitoldaskopustinskas twostepfabricationoflargeareasio2simembranes
AT dariusvirzonis twostepfabricationoflargeareasio2simembranes
AT ramunasnaujokaitis twostepfabricationoflargeareasio2simembranes
AT sigitastamulevicius twostepfabricationoflargeareasio2simembranes
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