Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers

Monolithic integration of GaAs p–i–n photodetectors grown on 300 mm silicon wafers

Vertical GaAs p–i–n photodetectors epitaxially grown on GaAs(001), Ge/Si(001), and Si(001) substrates are reported. The performances of such photodetectors were investigated as a function of threading dislocation density in the stacks. A low dark current at room temperature, below 100 pA up to −9 V...

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Bibliographic Details
Main Authors: H. Mehdi, M. Martin, S. David, J. M. Hartmann, J. Moeyaert, M. L. Touraton, C. Jany, L. Virot, J. Da Fonseca, J. Coignus, D. Blachier, T. Baron
Format: Article
Language:English
Published: AIP Publishing LLC 2020-12-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0030677

Internet

http://dx.doi.org/10.1063/5.0030677

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