Analytical study of Dual Material Surrounding Gate MOSFET to suppress short-channel effects (SCEs)
In this paper, a 2D analytical model for the Dual Material Surrounding Gate MOSFET (DMSG) by solving the Poisson equation has been proposed and verified using ATLAS TCAD device simulator. Analytical modeling of parameters like threshold voltage, surface potential and Electric field distribution is d...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2014-12-01
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| Series: | Engineering Science and Technology, an International Journal |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2215098614000482 |