Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SB...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2019-05-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/8/5/575 |