Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native de...

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Bibliographic Details
Main Authors: Fortunato Pezzimenti, Hichem Bencherif, Giuseppe De Martino, Lakhdar Dehimi, Riccardo Carotenuto, Massimo Merenda, Francesco G. Della Corte
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Electronics
Subjects:
4H-SiC
power devices
ON-state resistance
defects states
interface traps
Online Access:https://www.mdpi.com/2079-9292/10/6/735

Internet

https://www.mdpi.com/2079-9292/10/6/735

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