Simulation and analysis of the forward bias current–voltage–temperature characteristics of W/4H-SiC Schottky barrier diodes for temperature-sensing applications

by Kamal Zeghdar, Hichem Bencherif, Lakhdar Dehimi, Fortunato Pezzimenti, Francesco G. DellaCorte
Published 2020-01-01

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

by Fortunato Pezzimenti, Hichem Bencherif, Giuseppe De Martino, Lakhdar Dehimi, Riccardo Carotenuto, Massimo Merenda, Francesco G. Della Corte
Published 2021-03-01