Study on Annealing Process of Aluminum Oxide Passivation Layer for PERC Solar Cells
In this study, Atomic Layer Deposition (ALD) equipment was used to deposit Al<sub>2</sub>O<sub>3</sub> film on a p-type silicon wafer, trimethylaluminum (TMA) and H<sub>2</sub>O were used as precursor materials, and then the post-annealing process was conducted un...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-08-01
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| Series: | Coatings |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-6412/11/9/1052 |