Design and investigation of dopingless dual-gate tunneling transistor based on line tunneling
The dopingless tunneling FET (DLTFET) has attracted more and more attention due to the reduction of process complexity comparing to traditional TFET with heavy doping source and drain regions. But the on-state current of conventional DLTFET is lower because its on-state current is only determined by...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5087879 |