Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer

Effect of the Niobium-Doped Titanium Oxide Thickness and Thermal Oxide Layer for Silicon Quantum Dot Solar Cells as a Dopant-Blocking Layer

Abstract Silicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiOx:Nb) is adopted. Hydroflu...

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Bibliographic Details
Main Authors: Ryushiro Akaishi, Kohei Kitazawa, Kazuhiro Gotoh, Shinya Kato, Noritaka Usami, Yasuyoshi Kurokawa
Format: Article
Language:English
Published: SpringerOpen 2020-02-01
Series:Nanoscale Research Letters
Subjects:
Silicon quantum dot
Solar cell
Nb-doped titanium oxide
Amorphous silicon oxide
Thermal oxide
Online Access:https://doi.org/10.1186/s11671-020-3272-8

Internet

https://doi.org/10.1186/s11671-020-3272-8

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