Coupling behaviors of graphene/SiO2/Si structure with external electric field
A traveling electric field in surface acoustic wave was introduced into the graphene/SiO2/Si sample in the temperature range of 15 K to 300 K. The coupling behaviors between the sample and the electric field were analyzed using two parameters, the intensity attenuation and time delay of the travelin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4975150 |