Hydrodynamic modeling of electron transport in gated silicon nanowires transistors
We present a theoretical study of the low-field electron mobility in rectangular gated silicon nanowire transistors at 300 K based on a hydrodynamic model and the self-consistent solution of the Schrödinger and Poisson equations. The hydrodynamic model has been formulated by taking the moments of th...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Accademia Peloritana dei Pericolanti
2019-05-01
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| Series: | Atti della Accademia Peloritana dei Pericolanti : Classe di Scienze Fisiche, Matematiche e Naturali |
| Online Access: |
http://dx.doi.org/10.1478/AAPP.97S1A18
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