High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes

Freestanding semipolar (11-22) indium gallium nitride (InGaN) multiple-quantum-well light-emitting diodes (LEDs) emitting at 445 nm have been realized by the use of laser lift-off (LLO) of the LEDs from a 50-μm-thick GaN layer grown on a patterned (10-12) r-plane sapphire substrate (PSS)....

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Bibliographic Details
Main Authors: Zhiheng Quan, Duc V. Dinh, Silvino Presa, Brendan Roycroft, Ann Foley, Mahbub Akhter, Donagh O'Mahony, Pleun P. Maaskant, Marian Caliebe, Ferdinand Scholz, Peter J. Parbrook, Brian Corbett
Format: Article
Language:English
Published: IEEE 2016-01-01
Series:IEEE Photonics Journal
Subjects:
Light-emitting diodes (LEDs)
optoelectronic materials
semipolar gallium nitride (GaN)
laser lift-off (LLO)
metal organic vapor phase epitaxy (MOVPE)
Online Access:https://ieeexplore.ieee.org/document/7553585/

Internet

https://ieeexplore.ieee.org/document/7553585/

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