Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC

The uniaxial strain-induced electronic structure variations in intrinsic and Al doped (3C-, 4H-) SiC are studied by using first-principle calculations. The main findings are summarized as follows: (I) the tensile strain leads to a structural transformation in Al doped 3C-SiC, which is signed by the...

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Main Authors:	Sihao Deng, Lielin Wang, Hua Xie, Zaihong Wang, Yutian Wang, Shuqing Jiang, Hui Guo
Format:	Article
Language:	English
Published:	AIP Publishing LLC 2018-07-01
Series:	AIP Advances
Online Access:	http://dx.doi.org/10.1063/1.5025574

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spelling	doaj-a0290a04539d41acba6250adbd031e0c2020-11-24T23:43:30ZengAIP Publishing LLCAIP Advances2158-32262018-07-0187075216075216-610.1063/1.5025574064807ADVStrain-assisted band gap modulation in intrinsic and aluminum doped p-type SiCSihao Deng0Lielin Wang1Hua Xie2Zaihong Wang3Yutian Wang4Shuqing Jiang5Hui Guo6Fundamental Science on Nuclear Wastes and Environmental Safety Laboratory, Southwest University of Science and Technology, Mianyang 621010, People’s Republic of ChinaFundamental Science on Nuclear Wastes and Environmental Safety Laboratory, Southwest University of Science and Technology, Mianyang 621010, People’s Republic of ChinaFundamental Science on Nuclear Wastes and Environmental Safety Laboratory, Southwest University of Science and Technology, Mianyang 621010, People’s Republic of ChinaFundamental Science on Nuclear Wastes and Environmental Safety Laboratory, Southwest University of Science and Technology, Mianyang 621010, People’s Republic of ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xian 710071, People’s Republic of ChinaInstitute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, People’s Republic of ChinaKey Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xian 710071, People’s Republic of ChinaThe uniaxial strain-induced electronic structure variations in intrinsic and Al doped (3C-, 4H-) SiC are studied by using first-principle calculations. The main findings are summarized as follows: (I) the tensile strain leads to a structural transformation in Al doped 3C-SiC, which is signed by the total energy and lattice characteristics; (II) the band gap Eg modulation with large reductions is achieved by applying strains up to 2% in all compounds; (III) The high-symmetry points of valence band maximum and conduction band minimum in intrinsic and Al doped 4H-SiC show the abnormal characteristic under strain, corresponding to the maximum Eg as the strain is ∼-1%. These results suggest that the strain approach could be used to tune the electronic structures of SiC compounds.http://dx.doi.org/10.1063/1.5025574
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Sihao Deng Lielin Wang Hua Xie Zaihong Wang Yutian Wang Shuqing Jiang Hui Guo
spellingShingle	Sihao Deng Lielin Wang Hua Xie Zaihong Wang Yutian Wang Shuqing Jiang Hui Guo Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC AIP Advances
author_facet	Sihao Deng Lielin Wang Hua Xie Zaihong Wang Yutian Wang Shuqing Jiang Hui Guo
author_sort	Sihao Deng
title	Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
title_short	Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
title_full	Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
title_fullStr	Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
title_full_unstemmed	Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
title_sort	strain-assisted band gap modulation in intrinsic and aluminum doped p-type sic
publisher	AIP Publishing LLC
series	AIP Advances
issn	2158-3226
publishDate	2018-07-01
description	The uniaxial strain-induced electronic structure variations in intrinsic and Al doped (3C-, 4H-) SiC are studied by using first-principle calculations. The main findings are summarized as follows: (I) the tensile strain leads to a structural transformation in Al doped 3C-SiC, which is signed by the total energy and lattice characteristics; (II) the band gap Eg modulation with large reductions is achieved by applying strains up to 2% in all compounds; (III) The high-symmetry points of valence band maximum and conduction band minimum in intrinsic and Al doped 4H-SiC show the abnormal characteristic under strain, corresponding to the maximum Eg as the strain is ∼-1%. These results suggest that the strain approach could be used to tune the electronic structures of SiC compounds.
url	http://dx.doi.org/10.1063/1.5025574
work_keys_str_mv	AT sihaodeng strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic AT lielinwang strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic AT huaxie strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic AT zaihongwang strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic AT yutianwang strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic AT shuqingjiang strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic AT huiguo strainassistedbandgapmodulationinintrinsicandaluminumdopedptypesic
_version_	1725501293422706688

Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC

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