Strain-assisted band gap modulation in intrinsic and aluminum doped p-type SiC
The uniaxial strain-induced electronic structure variations in intrinsic and Al doped (3C-, 4H-) SiC are studied by using first-principle calculations. The main findings are summarized as follows: (I) the tensile strain leads to a structural transformation in Al doped 3C-SiC, which is signed by the...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5025574 |