Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

Investigation of Inversion Charge Characteristics and Inversion Charge Loss for InGaAs Negative-Capacitance Double-Gate FinFETs Considering Quantum Capacitance

This paper investigates the inversion charge characteristics and quantum-capacitance induced inversion charge loss for In<sub>0.53</sub>Ga<sub>0.47</sub>As negative-capacitance FinFETs (NC-FinFETs) using theoretical calculation corroborated with numerical simulation. Our stud...

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Bibliographic Details
Main Authors: Shih-En Huang, Shih-Han Lin, Pin Su
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Negative-capacitance FET (NCFET)
quantum capacitance
FinFET structure
CMOS
InGaAs
Online Access:https://ieeexplore.ieee.org/document/8959139/

Internet

https://ieeexplore.ieee.org/document/8959139/

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