A New Behavioral Model of Gate-Grounded NMOS for Simulating Snapback Characteristics
A new behavioral model of gate-grounded NMOS (ggNMOS) device is proposed for electrostatic discharge (ESD) simulation of snapback behavior. The concise snapback model is a solution for the lack of snapback characteristics of build-in SPICE models in high voltage conditions. Modeling analysis, verifi...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8986604/ |