Long-term stability assessment of AlGaN/GaN field effect transistors modified with peptides: Device characteristics vs. surface properties

AlGaN/GaN Field Effect Transistors (FETs) are promising biosensing devices. Functionalization of these devices is explored in this study using an in situ approach with phosphoric acid etchant and a phosphonic acid derivative. Devices are terminated on peptides and soaked in water for up to 168 hrs t...

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Bibliographic Details
Main Authors: Nathaniel Rohrbaugh, Isaac Bryan, Zachary Bryan, Ramon Collazo, Albena Ivanisevic
Format: Article
Language:English
Published: AIP Publishing LLC 2015-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4930192