Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties
Abstract The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for pr...
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
SpringerOpen
2020-08-01
|
Series: | Nano-Micro Letters |
Subjects: | |
Online Access: | http://link.springer.com/article/10.1007/s40820-020-00493-3 |
id |
doaj-9e49639b931145b5af76fe731942150e |
---|---|
record_format |
Article |
spelling |
doaj-9e49639b931145b5af76fe731942150e2020-11-25T03:33:37ZengSpringerOpenNano-Micro Letters2311-67062150-55512020-08-0112111310.1007/s40820-020-00493-3Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical PropertiesYixiu Wang0Shengyu Jin1Qingxiao Wang2Min Wu3Shukai Yao4Peilin Liao5Moon J. Kim6Gary J. Cheng7Wenzhuo Wu8School of Industrial Engineering, Purdue UniversitySchool of Industrial Engineering, Purdue UniversityDepartment of Materials Science and Engineering, University of Texas at DallasSchool of Industrial Engineering, Purdue UniversitySchool of Materials Engineering, Purdue UniversitySchool of Materials Engineering, Purdue UniversityDepartment of Materials Science and Engineering, University of Texas at DallasSchool of Industrial Engineering, Purdue UniversitySchool of Industrial Engineering, Purdue UniversityAbstract The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.http://link.springer.com/article/10.1007/s40820-020-00493-3Chiral semiconductorNanowiresNanoimprintingStrain engineeringOptical property |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yixiu Wang Shengyu Jin Qingxiao Wang Min Wu Shukai Yao Peilin Liao Moon J. Kim Gary J. Cheng Wenzhuo Wu |
spellingShingle |
Yixiu Wang Shengyu Jin Qingxiao Wang Min Wu Shukai Yao Peilin Liao Moon J. Kim Gary J. Cheng Wenzhuo Wu Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties Nano-Micro Letters Chiral semiconductor Nanowires Nanoimprinting Strain engineering Optical property |
author_facet |
Yixiu Wang Shengyu Jin Qingxiao Wang Min Wu Shukai Yao Peilin Liao Moon J. Kim Gary J. Cheng Wenzhuo Wu |
author_sort |
Yixiu Wang |
title |
Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties |
title_short |
Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties |
title_full |
Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties |
title_fullStr |
Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties |
title_full_unstemmed |
Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties |
title_sort |
parallel nanoimprint forming of one-dimensional chiral semiconductor for strain-engineered optical properties |
publisher |
SpringerOpen |
series |
Nano-Micro Letters |
issn |
2311-6706 2150-5551 |
publishDate |
2020-08-01 |
description |
Abstract The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains. |
topic |
Chiral semiconductor Nanowires Nanoimprinting Strain engineering Optical property |
url |
http://link.springer.com/article/10.1007/s40820-020-00493-3 |
work_keys_str_mv |
AT yixiuwang parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT shengyujin parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT qingxiaowang parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT minwu parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT shukaiyao parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT peilinliao parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT moonjkim parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT garyjcheng parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties AT wenzhuowu parallelnanoimprintformingofonedimensionalchiralsemiconductorforstrainengineeredopticalproperties |
_version_ |
1724562628263542784 |