Temperature-dependent efficiency droop in AlGaN epitaxial layers and quantum wells
Luminescence efficiency droop has been studied in AlGaN epitaxial layers and multiple quantum wells (MQWs) with different strength of carrier localization in a wide range of temperatures. It is shown that the dominant mechanism leading to droop, i.e., the efficiency reduction at high carrier densiti...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-04-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4947574 |