Uniform bipolar resistive switching properties with self-compliance effect of Pt/TiO2/p-Si devices
We report uniform bipolar resistive switching characteristic with self-compliance effect of Pt/TiO2/p-Si devices in which TiO2 thin films were prepared directly on p-Si substrates by chemical solution deposition method. The resistive switching parameters of the Pt/TiO2/p-Si cell obtained, such as di...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-03-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4869018 |