Unraveling crystal symmetry and strain effects on electronic band structures of SiC polytypes
The modulations of the electronic band structures of hexagonal (2H, 4H, and 6H) and cubic (3C) SiC under biaxial (0001) and (111) in-plane strain are investigated by using first-principles calculations including spin–orbit coupling effects. We have clarified that the strain dependency of the valence...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2020-10-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0010512 |