The new approach to the creation of the nonvolatile memory based on Si-MOS-transistors
A new approach to the creation of a long-term random-access memory based on the effect of the electron-ion interaction on Si-MOS-transistors is proposed. The difference in levels of signals «zero» and «unit» depends on the regime of reading, and can vary widely. Time of recording-erasing is determin...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2011-06-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2011/3_2011/pdf/01.zip |