Point defects and grain boundary effects on tensile strength of 3C-SiC studied by molecular dynamics simulations

The tensile strength of irradiated 3C-SiC, SiC with artificial point defects, SiC with symmetric tilt grain boundaries (GBs), irradiated SiC with GBs are investigated using molecular dynamics simulations at 300 K. For an irradiated SiC sample, the tensile strength decreases with the increase of irra...

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Bibliographic Details
Main Authors: Yingying Li, Yan Li, Wei Xiao
Format: Article
Language:English
Published: Elsevier 2019-06-01
Series:Nuclear Engineering and Technology
Online Access:http://www.sciencedirect.com/science/article/pii/S1738573318303449