Effect of normal strain and external electric field on electronic properties of the GeC bilayer: A first-principles study
The electronic properties of the GeC bilayer with different stacking patterns are investigated using density functional theory. A different behavior shows up when applying normal strain and electric field (E-field). Under normal strain, the bandgap becomes very elastic and presents an indirect-to-di...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-12-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5109686 |