Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory
Abstract Traditional ferroelectric devices suffer a lack of scalability. Doped HfO2 thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline nature. Stable ferroelectric-like behavior is firstly demonstrated in a 3.6-nm-...
| Main Authors: | , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
SpringerOpen
2020-06-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-020-03364-3 |