Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory

Abstract Traditional ferroelectric devices suffer a lack of scalability. Doped HfO2 thin film is promising to solve the scaling problem but challenged by high leakage current and uniformity concern by the polycrystalline nature. Stable ferroelectric-like behavior is firstly demonstrated in a 3.6-nm-...

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Bibliographic Details
Main Authors: Yue Peng, Genquan Han, Fenning Liu, Wenwu Xiao, Yan Liu, Ni Zhong, Chungang Duan, Ze Feng, Hong Dong, Yue Hao
Format: Article
Language:English
Published: SpringerOpen 2020-06-01
Series:Nanoscale Research Letters
Subjects:
Amorphous
Al2O3
Ferroelectric
Memory
Oxygen vacancy dipole
Non-volatile field-effect transistor
Online Access:http://link.springer.com/article/10.1186/s11671-020-03364-3

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http://link.springer.com/article/10.1186/s11671-020-03364-3

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