On the influence of interface charging dynamics and stressing conditions in strained silicon devices
Abstract The performance of strained silicon devices based on the deposition of a top silicon nitride layer with high stress have been thoroughly analyzed by means of simulations and experimental results. Results clearly indicate that the electro-optic static response is basically governed by carrie...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2017-08-01
|
| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-017-05067-9 |