Impacts of Indirect Wider Bandgap of Non-Toxic AlxGa1-xAs Buffer in Copper-Indium-Gallium-Diselenide Photovoltaic Cell

Impacts of Indirect Wider Bandgap of Non-Toxic AlxGa1-xAs Buffer in Copper-Indium-Gallium-Diselenide Photovoltaic Cell

A numerical simulation and substantiation have been accomplished to analyze the impact of Al0.9Ga0.1As alloy composite buffer layer band gap and thickness, absorber layer thickness on a ZnO:Al/i-ZnO/Al0.9Ga0.1As/CIGS/Mo/SLG structured non-toxic Cd-free CIGS photovoltaic cell. In this study, the cell...

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Bibliographic Details
Main Authors: Sadia Islam Shachi, Nusrat Jahan, Ali Newaz Bahar, Md. Asaduzzaman
Format: Article
Language:English
Published: KeAi Communications Co., Ltd. 2020-01-01
Series:Solid State Electronics Letters
Subjects:
Indirect bandgap
Cd-free
Al0.9Ga0.1 buffer layer
critical thickness
CIGS solar cell
Online Access:http://www.sciencedirect.com/science/article/pii/S2589208820300181

Internet

http://www.sciencedirect.com/science/article/pii/S2589208820300181

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