Thermal Energy Diffusion Incorporating Generalized Einstein Relation for Degenerate Semiconductors

Thermal Energy Diffusion Incorporating Generalized Einstein Relation for Degenerate Semiconductors

The currently used generalized Einstein relation for degenerate semiconductors with isotropic nonparabolic energy bands produces physically improper results, as well as losing numerical accuracy for large values of nonparabolicity parameters at room temperature. Therefore, a new generalized Einstein...

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Bibliographic Details
Main Author: Jang Jyegal
Format: Article
Language:English
Published: MDPI AG 2017-07-01
Series:Applied Sciences
Subjects:
Einstein relation
effective carrier temperature
degenerate semiconductor
nonparabolic energy band
diffusion coefficient
compound semiconductor
Online Access:https://www.mdpi.com/2076-3417/7/8/773

Internet

https://www.mdpi.com/2076-3417/7/8/773

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