Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

Role of Structure and Composition on the Performances of P-Type Tin Oxide Thin-Film Transistors Processed at Low-Temperatures

This work reports on the role of structure and composition on the determination of the performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf magnetron sputtering at room temperature, followed by a post-annealed step up to 200 °C at different oxygen partial pressur...

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Bibliographic Details
Main Authors: Raquel Barros, Kachirayil J. Saji, João C. Waerenborgh, Pedro Barquinha, Luís Pereira, Emanuel Carlos, Rodrigo Martins, Elvira Fortunato
Format: Article
Language:English
Published: MDPI AG 2019-03-01
Series:Nanomaterials
Subjects:
p-type TFT
p-type oxide semiconductors
SnO electrical properties
oxide structure analysis
Online Access:http://www.mdpi.com/2079-4991/9/3/320

Internet

http://www.mdpi.com/2079-4991/9/3/320

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