Modeling the Boron-Doping Silicon Beam by a Multilayer Model
The boron-doping silicon beam commonly used in microdevices exhibits a nonuniform material property along its thickness or width because of the gradient of boron concentration induced by diffusion process. The constant of rigidity, one of the most important parameters of microbeam, needs to be accur...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2014-01-01
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| Series: | Mathematical Problems in Engineering |
| Online Access: | http://dx.doi.org/10.1155/2014/894286 |