Graded-gap semiconductors and their application
In graded-gap semiconductors spatial dependence of energy gap leads to quasi-electrical embedded layers of different size for holes and electrons, respectively alter their mobility. This results in diffusion-drift mechanism of transfer of alignment-grown carriers, change of coordinate distribution o...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
PC Technology Center
2013-12-01
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| Series: | Tehnologìčnij Audit ta Rezervi Virobnictva |
| Subjects: | |
| Online Access: | http://journals.uran.ua/tarp/article/view/19578 |