Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Micro-light emitting diodes (Micro-LEDs) based on III-nitride semiconductors have become a research hotspot in the field of high-resolution display due to its unique advantages. However, the edge effect caused by inductively coupled plasma (ICP) dry etching in Micro-LEDs become significant with resp...

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Bibliographic Details
Main Authors: Junchi Yu, Tao Tao, Bin Liu, Feifan Xu, Yao Zheng, Xuan Wang, Yimeng Sang, Yu Yan, Zili Xie, Shihao Liang, Dunjun Chen, Peng Chen, Xiangqian Xiu, Youdou Zheng, Rong Zhang
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Crystals
Subjects:
Micro-LED
passivation
edge effect
Online Access:https://www.mdpi.com/2073-4352/11/4/403

Internet

https://www.mdpi.com/2073-4352/11/4/403

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