Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Dielectric Films for the Application to Energy Storage Devices

Fabrication of Silicon Nanowire Metal-Oxide-Semiconductor Capacitors with Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> Stacked Dielectric Films for the Application to Energy Storage Devices

Silicon nanowire (SiNW) metal-oxide-semiconductor (MOS) capacitors with Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> (ATA) stacked dielectric films were fabricated by metal-assisted chemical etching (MACE) and ato...

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Bibliographic Details
Main Authors: Ryota Nezasa, Kazuhiro Gotoh, Shinya Kato, Satoru Miyamoto, Noritaka Usami, Yasuyoshi Kurokawa
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Energies
Subjects:
silicon nanowire
energy storage device
metal assisted chemical etching
atomic layer deposition
Online Access:https://www.mdpi.com/1996-1073/14/15/4538

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https://www.mdpi.com/1996-1073/14/15/4538

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