Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

• Main Authors: Qifeng Lu, Yifei Mu, Joseph W. Roberts, Mohammed Althobaiti, Vinod R. Dhanak, Jingjin Wu, Chun Zhao, Ce Zhou Zhao, Qian Zhang, Li Yang, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker
• Format: Article
• Language: English
• Published: MDPI AG 2015-12-01
• Series: Materials
• Subjects: Ge substrate; titanium-doped hafnium oxide; XPS; XRD; AFM
• Online Access: http://www.mdpi.com/1996-1944/8/12/5454

In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide and hafnium oxide, respectively. X-ray Photoelectron Spectroscopy (XPS) indicates the formation of GeOx and germanate at the interface. X-ray diffraction (XRD) indicates that all the thin films remain amorphous for this deposition condition. The surface roughness was analyzed using an atomic force microscope (AFM) for each sample. The electrical characterization shows very low hysteresis between ramp up and ramp down of the Capacitance-Voltage (CV) and the curves are indicative of low trap densities. A relatively large leakage current is observed and the lowest leakage current among the four samples is about 1 mA/cm2 at a bias of 0.5 V for a Ti0.9Hf0.1O2 sample. The large leakage current is partially attributed to the deterioration of the interface between Ge and TixHf1–xO2 caused by the oxidation source from HfO2. Consideration of the energy band diagrams for the different materials systems also provides a possible explanation for the observed leakage current behavior.