Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

Electrical Properties and Interfacial Studies of HfxTi1–xO2 High Permittivity Gate Insulators Deposited on Germanium Substrates

In this research, the hafnium titanate oxide thin films, TixHf1–xO2, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide an...

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Bibliographic Details
Main Authors: Qifeng Lu, Yifei Mu, Joseph W. Roberts, Mohammed Althobaiti, Vinod R. Dhanak, Jingjin Wu, Chun Zhao, Ce Zhou Zhao, Qian Zhang, Li Yang, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker
Format: Article
Language:English
Published: MDPI AG 2015-12-01
Series:Materials
Subjects:
Ge substrate
titanium-doped hafnium oxide
XPS
XRD
AFM
Online Access:http://www.mdpi.com/1996-1944/8/12/5454

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http://www.mdpi.com/1996-1944/8/12/5454

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